| PART |
Description |
Maker |
| LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM
CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| AT28C256-15PI AT28C256-15PC AT28C256E AT28C256E-15 |
256K 32K x 8 Paged CMOS E2PROM
256K (32K x 8) Paged CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| AT49BV4096 AT49BV4096-15RC AT49BV4096-15RI AT49BV4 |
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 200 ns, PDSO48
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 120 ns, PDSO44
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 150 ns, PDSO44
|
Atmel, Corp.
ATMEL[ATMEL Corporation]
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
IC-SM-256K CMOS EEPRM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
| CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns
256K-bit CMOS parallel EEPROM 200ns
256K-bit CMOS parallel EEPROM 300ns
256K-Bit CMOS PARALLEL E2PROM
128Kx8 EEPROM 128Kx8 EEPROM
32K X 8 EEPROM 3V, 200 ns, PQCC32
|
http://
CATALYST[Catalyst Semiconductor]
Intersil, Corp.
Epson (China) Co., Ltd.
STMicroelectronics N.V.
ON SEMICONDUCTOR
|
| AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
Xicon Passive Components
Amphenol, Corp.
|
| 29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
| LH52256C LH52256CH |
CMOS 256K (32K x 8) Static RAM
|
Sharp Electrionic Compo...
Sharp Electrionic Components
|
|
